93LC46TI/SN vs 93LC46/PB25 feature comparison

93LC46TI/SN Microchip Technology Inc

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93LC46/PB25 Microchip Technology Inc

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Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Not Recommended Not Recommended
Ihs Manufacturer MICROCHIP TECHNOLOGY INC MICROCHIP TECHNOLOGY INC
Part Package Code SOIC DIP
Package Description SOP, SOP8,.25 DIP,
Pin Count 8 8
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.51 8542.32.00.51
Date Of Intro 1991-01-01
Alternate Memory Width 8 8
Clock Frequency-Max (fCLK) 2 MHz 2 MHz
Data Retention Time-Min 200 40
Endurance 1000000 Write/Erase Cycles
JESD-30 Code R-PDSO-G8 R-PDIP-T8
JESD-609 Code e3 e3
Length 4.9 mm 9.9695 mm
Memory Density 1024 bit 1024 bit
Memory IC Type EEPROM EEPROM
Memory Width 16 16
Moisture Sensitivity Level 1
Number of Functions 1 1
Number of Ports 1
Number of Terminals 8 8
Number of Words 64 words 64 words
Number of Words Code 64 64
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 85 °C 70 °C
Operating Temperature-Min -40 °C
Organization 64X16 64X16
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code SOP DIP
Package Equivalence Code SOP8,.23
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE IN-LINE
Parallel/Serial SERIAL SERIAL
Peak Reflow Temperature (Cel) 260
Programming Voltage 3 V
Qualification Status Not Qualified Not Qualified
Screening Level TS 16949
Seated Height-Max 1.75 mm 4.064 mm
Serial Bus Type MICROWIRE MICROWIRE
Standby Current-Max 0.0001 A
Supply Current-Max 0.003 mA 0.003 mA
Supply Voltage-Max (Vsup) 5.5 V 6 V
Supply Voltage-Min (Vsup) 2.5 V 2 V
Supply Voltage-Nom (Vsup) 3 V 4.5 V
Surface Mount YES NO
Technology CMOS CMOS
Temperature Grade INDUSTRIAL COMMERCIAL
Terminal Finish MATTE TIN MATTE TIN
Terminal Form GULL WING THROUGH-HOLE
Terminal Pitch 1.27 mm 2.54 mm
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Width 3.9 mm 7.62 mm
Write Cycle Time-Max (tWC) 10 ms 10 ms
Write Protection SOFTWARE
Base Number Matches 5 1
Additional Feature 100K ERASE/WRITE CYCLES MIN; DATA RETENTION > 40 YEARS
Output Characteristics 3-STATE

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