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93AA66B-I/P vs 93LC66B/PD22 feature comparison

93AA66B-I/P Microchip Technology Inc

Buy Now Datasheet

93LC66B/PD22 Microchip Technology Inc

Buy Now Datasheet
Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC MICROCHIP TECHNOLOGY INC
Part Package Code DIP DIP
Package Description 0.300 INCH, ROHS COMPLIANT, PLASTIC, DIP-8 DIP,
Pin Count 8 8
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.51 8542.32.00.51
Factory Lead Time 6 Weeks
Samacsys Manufacturer Microchip
Clock Frequency-Max (fCLK) 1 MHz 2 MHz
Data Retention Time-Min 200 200
Endurance 1000000 Write/Erase Cycles
JESD-30 Code R-PDIP-T8 R-PDIP-T8
JESD-609 Code e3 e3
Length 9.27 mm 9.46 mm
Memory Density 4096 bit 4096 bit
Memory IC Type EEPROM EEPROM
Memory Width 16 16
Number of Functions 1 1
Number of Ports 1
Number of Terminals 8 8
Number of Words 256 words 256 words
Number of Words Code 256 256
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 85 °C 70 °C
Operating Temperature-Min -40 °C
Organization 256X16 256X16
Output Characteristics TOTEM POLE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code DIP DIP
Package Equivalence Code DIP8,.3
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Parallel/Serial SERIAL SERIAL
Qualification Status Not Qualified Not Qualified
Ready/Busy YES
Reverse Pinout NO
Screening Level TS 16949
Seated Height-Max 5.33 mm 4.32 mm
Serial Bus Type MICROWIRE MICROWIRE
Standby Current-Max 0.000001 A
Supply Current-Max 0.002 mA 0.0015 mA
Supply Voltage-Max (Vsup) 5.5 V 6 V
Supply Voltage-Min (Vsup) 1.8 V 2.5 V
Supply Voltage-Nom (Vsup) 2.5 V 3 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade INDUSTRIAL COMMERCIAL
Terminal Finish MATTE TIN MATTE TIN
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Toggle Bit YES
Width 7.62 mm 7.62 mm
Write Cycle Time-Max (tWC) 6 ms 6 ms
Write Protection SOFTWARE
Base Number Matches 2 1
Additional Feature 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS
Memory » EEPROMs
Memory » EEPROMs

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