934066471127 vs NP89N055PUK-E2-AY feature comparison

934066471127 NXP Semiconductors

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NP89N055PUK-E2-AY Renesas Electronics Corporation

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS RENESAS ELECTRONICS CORP
Package Description FLANGE MOUNT, R-PSFM-T3 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 273 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 55 V
Drain Current-Max (ID) 100 A 90 A
Drain-source On Resistance-Max 0.0046 Ω 0.004 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB TO-263AB
JESD-30 Code R-PSFM-T3 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 613 A 360 A
Reference Standard AEC-Q101; IEC-60134 AEC-Q101
Surface Mount NO YES
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pbfree Code Yes
Rohs Code Yes
Part Package Code MP-25ZP
Pin Count 3
Manufacturer Package Code PRSS0004AL-A3
Samacsys Manufacturer Renesas Electronics
Operating Temperature-Max 175 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation-Max (Abs) 147 W
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare 934066471127 with alternatives

Compare NP89N055PUK-E2-AY with alternatives