934033430118
vs
IRF7706GPBF
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
NXP SEMICONDUCTORS
INTERNATIONAL RECTIFIER CORP
Part Package Code
SOIC
TSSOP
Package Description
SMALL OUTLINE, R-PDSO-G8
SMALL OUTLINE, R-PDSO-G8
Pin Count
8
8
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Additional Feature
LOGIC LEVEL COMPATIBLE
HIGH RELIABILITY
Avalanche Energy Rating (Eas)
13 mJ
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
30 V
Drain Current-Max (ID)
3.4 A
7 A
Drain-source On Resistance-Max
0.1 Ω
0.022 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
MS-012AA
MO-153AA
JESD-30 Code
R-PDSO-G8
R-PDSO-G8
Number of Elements
2
1
Number of Terminals
8
8
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
P-CHANNEL
Pulsed Drain Current-Max (IDM)
14 A
28 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
2
JESD-609 Code
e3
Moisture Sensitivity Level
2
Operating Temperature-Max
150 °C
Power Dissipation-Max (Abs)
1.51 W
Terminal Finish
MATTE TIN
Compare 934033430118 with alternatives
Compare IRF7706GPBF with alternatives