933845720215
vs
PMBT5550,215
feature comparison
Pbfree Code |
Yes
|
|
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Transferred
|
Transferred
|
Ihs Manufacturer |
NXP SEMICONDUCTORS
|
NXP SEMICONDUCTORS
|
Package Description |
SMALL OUTLINE, R-PDSO-G3
|
SMALL OUTLINE, R-PDSO-G3
|
Pin Count |
3
|
3
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Collector Current-Max (IC) |
0.3 A
|
0.3 A
|
Collector-Emitter Voltage-Max |
140 V
|
140 V
|
Configuration |
SINGLE
|
SINGLE
|
DC Current Gain-Min (hFE) |
20
|
20
|
JEDEC-95 Code |
TO-236AB
|
|
JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
JESD-609 Code |
e3
|
e3
|
Moisture Sensitivity Level |
1
|
1
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
260
|
Polarity/Channel Type |
NPN
|
NPN
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
Tin (Sn)
|
TIN
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
30
|
Transistor Element Material |
SILICON
|
SILICON
|
Transition Frequency-Nom (fT) |
100 MHz
|
100 MHz
|
Base Number Matches |
2
|
2
|
Part Package Code |
|
TO-236
|
Manufacturer Package Code |
|
SOT23
|
HTS Code |
|
8541.21.00.95
|
Collector-Base Capacitance-Max |
|
6 pF
|
Operating Temperature-Max |
|
150 °C
|
Power Dissipation-Max (Abs) |
|
0.35 W
|
VCEsat-Max |
|
0.25 V
|
|
|
|
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