933582620112 vs BLV57 feature comparison

933582620112 NXP Semiconductors

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BLV57 NXP Semiconductors

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Rohs Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS NXP SEMICONDUCTORS
Package Description FLANGE MOUNT, R-CDFM-F8 FLANGE MOUNT, R-CDFM-F8
Pin Count 8 8
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature HIGH RELIABILITY, DIFFUSED EMITTER BALLASTING RESISTORS HIGH RELIABILITY, DIFFUSED EMITTER BALLASTING RESISTORS
Case Connection ISOLATED ISOLATED
Collector Current-Max (IC) 2 A 2 A
Collector-Base Capacitance-Max 30 pF 30 pF
Collector-Emitter Voltage-Max 27 V 27 V
Configuration COMMON EMITTER, 2 ELEMENTS COMMON EMITTER, 2 ELEMENTS
Highest Frequency Band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-CDFM-F8 R-CDFM-F8
Number of Elements 2 2
Number of Terminals 8 8
Package Body Material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN NPN
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form FLAT FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER AMPLIFIER
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 2500 MHz 2500 MHz
Base Number Matches 1 2
Part Package Code SOT
Manufacturer Package Code SOT161A
HTS Code 8541.29.00.75
DC Current Gain-Min (hFE) 15
Operating Temperature-Max 200 °C
Power Dissipation Ambient-Max 77 W
Power Dissipation-Max (Abs) 77 W
Power Gain-Min (Gp) 8 dB

Compare 933582620112 with alternatives

Compare BLV57 with alternatives