933120350113
vs
1N4448-GT3
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
NXP SEMICONDUCTORS
SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description
O-LALF-W2
O-LALF-W2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
HTS Code
8541.10.00.70
Application
GENERAL PURPOSE
GENERAL PURPOSE
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1 V
JEDEC-95 Code
DO-35
DO-35
JESD-30 Code
O-LALF-W2
O-LALF-W2
JESD-609 Code
e3
Non-rep Pk Forward Current-Max
4 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
200 °C
Output Current-Max
0.2 A
0.15 A
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Power Dissipation-Max
0.5 W
0.5 W
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
75 V
75 V
Reverse Current-Max
0.025 µA
Reverse Recovery Time-Max
0.004 µs
0.004 µs
Surface Mount
NO
NO
Terminal Finish
TIN
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
1
1
Additional Feature
HIGH RELIABILITY
Moisture Sensitivity Level
1
Compare 933120350113 with alternatives
Compare 1N4448-GT3 with alternatives