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933101220143 vs BAW62,133 feature comparison

933101220143 NXP Semiconductors

Buy Now Datasheet

BAW62,133 NXP Semiconductors

Buy Now Datasheet
Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS NXP SEMICONDUCTORS
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.80
Application GENERAL PURPOSE GENERAL PURPOSE
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V
JEDEC-95 Code DO-35 DO-35
JESD-30 Code O-LALF-W2 O-LALF-W2
Non-rep Pk Forward Current-Max 4 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 200 °C 200 °C
Output Current-Max 0.25 A 0.25 A
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Power Dissipation-Max 0.35 W 0.35 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 75 V 75 V
Reverse Current-Max 5 µA
Reverse Recovery Time-Max 0.004 µs 0.004 µs
Surface Mount NO NO
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Base Number Matches 1 2
Part Package Code AXIAL
Package Description O-LALF-W2
Pin Count 2
Manufacturer Package Code SOD27
JESD-609 Code e3
Moisture Sensitivity Level 1
Terminal Finish TIN
Diodes » Rectifier Diodes
Diodes » Rectifier Diodes

Compare 933101220143 with alternatives

Compare BAW62,133 with alternatives