933063420126
vs
BF199
feature comparison
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
SIEMENS A G
|
| Part Package Code |
TO-92
|
|
| Package Description |
CYLINDRICAL, O-PBCY-T3
|
|
| Pin Count |
3
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
0.025 A
|
0.025 A
|
| Collector-Base Capacitance-Max |
0.5 pF
|
|
| Collector-Emitter Voltage-Max |
25 V
|
25 V
|
| Configuration |
SINGLE
|
SINGLE
|
| JEDEC-95 Code |
TO-92
|
|
| JESD-30 Code |
O-PBCY-T3
|
O-PBCY-T3
|
| JESD-609 Code |
e3
|
e0
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
TIN
|
Tin/Lead (Sn/Pb)
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Transistor Application |
AMPLIFIER
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
550 MHz
|
550 MHz
|
| Base Number Matches |
1
|
1
|
| DC Current Gain-Min (hFE) |
|
40
|
| Operating Temperature-Max |
|
150 °C
|
| Power Dissipation-Max (Abs) |
|
0.5 W
|
| Power Gain-Min (Gp) |
|
43 dB
|
|
|
|
Compare 933063420126 with alternatives
Compare BF199 with alternatives