8R004SRV0203C25
vs
AWB512ES2{LOW-VOLT}
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
WHITE ELECTRONIC DESIGNS CORP
SEIKO EPSON CORP
Package Description
CARD-68
,
Reach Compliance Code
unknown
unknown
Access Time-Max
250 ns
200 ns
Alternate Memory Width
8
JESD-30 Code
X-XXMA-X68
X-XXMA-X68
Memory Density
4194304 bit
4194304 bit
Memory IC Type
SRAM CARD
SRAM CARD
Memory Width
16
16
Number of Functions
1
1
Number of Terminals
68
68
Number of Words
262144 words
262144 words
Number of Words Code
256000
256000
Operating Mode
ASYNCHRONOUS
ASYNCHRONOUS
Operating Temperature-Max
70 °C
60 °C
Operating Temperature-Min
Organization
256KX16
256KX16
Package Body Material
UNSPECIFIED
UNSPECIFIED
Package Shape
UNSPECIFIED
UNSPECIFIED
Package Style
MICROELECTRONIC ASSEMBLY
MICROELECTRONIC ASSEMBLY
Parallel/Serial
PARALLEL
PARALLEL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Qualification Status
Not Qualified
Not Qualified
Supply Voltage-Nom (Vsup)
3.3 V
5 V
Surface Mount
NO
NO
Technology
CMOS
CMOS
Temperature Grade
COMMERCIAL
COMMERCIAL
Terminal Form
UNSPECIFIED
UNSPECIFIED
Terminal Position
UNSPECIFIED
UNSPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
1
2
ECCN Code
3A991.B.2.A
HTS Code
8542.32.00.41
Additional Feature
2K X 8 EEPROM ATTRIBUTE MEMORY; 2-DIGITAL OUTPUTS TO INDICATE BATTERY CONDITION
Number of Ports
1
Output Characteristics
3-STATE
Output Enable
YES
Standby Voltage-Min
2.5 V
Supply Voltage-Max (Vsup)
5.5 V
Supply Voltage-Min (Vsup)
3 V
Compare 8R004SRV0203C25 with alternatives
Compare AWB512ES2{LOW-VOLT} with alternatives