8413206SA
vs
AM2167-45DC
feature comparison
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
PYRAMID SEMICONDUCTOR CORP
|
MSIS SEMICONDUCTOR INC
|
| Package Description |
DFP, FL20,.3
|
DIP, DIP20,.3
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
3A001.A.2.C
|
EAR99
|
| HTS Code |
8542.32.00.41
|
8542.32.00.41
|
| Access Time-Max |
120 ns
|
45 ns
|
| I/O Type |
SEPARATE
|
SEPARATE
|
| JESD-30 Code |
R-XDFP-F20
|
R-XDIP-T20
|
| Memory Density |
4096 bit
|
16384 bit
|
| Memory IC Type |
STANDARD SRAM
|
STANDARD SRAM
|
| Memory Width |
1
|
1
|
| Number of Functions |
1
|
|
| Number of Terminals |
18
|
20
|
| Number of Words |
4096 words
|
16384 words
|
| Number of Words Code |
4000
|
16000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
125 °C
|
70 °C
|
| Operating Temperature-Min |
-55 °C
|
|
| Organization |
4KX1
|
16KX1
|
| Output Characteristics |
3-STATE
|
3-STATE
|
| Package Body Material |
CERAMIC, GLASS-SEALED
|
CERAMIC
|
| Package Code |
DFP
|
DIP
|
| Package Equivalence Code |
FL20,.3
|
DIP20,.3
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Screening Level |
38535Q/M;38534H;883B
|
|
| Standby Current-Max |
0.0002 A
|
|
| Standby Voltage-Min |
2 V
|
|
| Supply Current-Max |
0.07 mA
|
0.12 mA
|
| Supply Voltage-Max (Vsup) |
5.5 V
|
|
| Supply Voltage-Min (Vsup) |
4.5 V
|
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
YES
|
NO
|
| Technology |
CMOS
|
MOS
|
| Temperature Grade |
MILITARY
|
COMMERCIAL
|
| Terminal Form |
FLAT
|
THROUGH-HOLE
|
| Terminal Pitch |
1.27 mm
|
2.54 mm
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
2
|
2
|
| Rohs Code |
|
No
|
| JESD-609 Code |
|
e0
|
| Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
|
|
|
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