71V3576SA150BGI8 vs 71V3576SA150BGGI8 feature comparison

71V3576SA150BGI8 Integrated Device Technology Inc

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71V3576SA150BGGI8 Integrated Device Technology Inc

Buy Now Datasheet
Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INTEGRATED DEVICE TECHNOLOGY INC INTEGRATED DEVICE TECHNOLOGY INC
Reach Compliance Code not_compliant compliant
ECCN Code 3A991.B.2.A 3A991.B.2.A
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 3.8 ns 3.8 ns
Clock Frequency-Max (fCLK) 150 MHz 150 MHz
I/O Type COMMON COMMON
JESD-30 Code R-PBGA-B119 R-PBGA-B119
JESD-609 Code e0 e1
Memory Density 4718592 bit 4718592 bit
Memory IC Type STANDARD SRAM STANDARD SRAM
Memory Width 36 36
Moisture Sensitivity Level 3 3
Number of Terminals 119 119
Number of Words 131072 words 131072 words
Number of Words Code 128000 128000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min -40 °C -40 °C
Organization 128KX36 128KX36
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code BGA BGA
Package Equivalence Code BGA119,7X17,50 BGA119,7X17,50
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY GRID ARRAY
Parallel/Serial PARALLEL PARALLEL
Peak Reflow Temperature (Cel) 225 260
Qualification Status Not Qualified Not Qualified
Standby Current-Max 0.035 A 0.035 A
Standby Voltage-Min 3.14 V 3.14 V
Supply Current-Max 0.305 mA 0.305 mA
Supply Voltage-Max (Vsup) 3.465 V 3.465 V
Supply Voltage-Min (Vsup) 3.135 V 3.135 V
Supply Voltage-Nom (Vsup) 3.3 V 3.3 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL INDUSTRIAL
Terminal Finish TIN LEAD Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form BALL BALL
Terminal Pitch 1.27 mm 1.27 mm
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) 20 30
Base Number Matches 1 1
Pbfree Code Yes

Compare 71V3576SA150BGI8 with alternatives

Compare 71V3576SA150BGGI8 with alternatives