71V2546XS150BGG8
vs
K7I163684B-FC330
feature comparison
| Pbfree Code |
Yes
|
|
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
INTEGRATED DEVICE TECHNOLOGY INC
|
SAMSUNG SEMICONDUCTOR INC
|
| Part Package Code |
BGA
|
BGA
|
| Package Description |
BGA,
|
LBGA,
|
| Pin Count |
119
|
165
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
3A991.B.2.A
|
3A991.B.2.A
|
| HTS Code |
8542.32.00.41
|
8542.32.00.41
|
| Access Time-Max |
3.8 ns
|
0.45 ns
|
| Additional Feature |
PIPELINED ARCHITECTURE
|
PIPELINED ARCHITECTURE
|
| JESD-30 Code |
R-PBGA-B119
|
R-PBGA-B165
|
| JESD-609 Code |
e1
|
e0
|
| Length |
22 mm
|
15 mm
|
| Memory Density |
4718592 bit
|
18874368 bit
|
| Memory IC Type |
ZBT SRAM
|
DDR SRAM
|
| Memory Width |
36
|
36
|
| Moisture Sensitivity Level |
3
|
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
119
|
165
|
| Number of Words |
131072 words
|
524288 words
|
| Number of Words Code |
128000
|
512000
|
| Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
| Operating Temperature-Max |
70 °C
|
70 °C
|
| Operating Temperature-Min |
|
|
| Organization |
128KX36
|
512KX36
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
BGA
|
LBGA
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
GRID ARRAY
|
GRID ARRAY, LOW PROFILE
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Seated Height-Max |
2.36 mm
|
1.4 mm
|
| Supply Voltage-Max (Vsup) |
3.465 V
|
1.9 V
|
| Supply Voltage-Min (Vsup) |
3.135 V
|
1.7 V
|
| Supply Voltage-Nom (Vsup) |
3.3 V
|
1.8 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
COMMERCIAL
|
COMMERCIAL
|
| Terminal Finish |
TIN SILVER COPPER
|
TIN LEAD
|
| Terminal Form |
BALL
|
BALL
|
| Terminal Pitch |
1.27 mm
|
1 mm
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Width |
14 mm
|
13 mm
|
| Base Number Matches |
1
|
1
|
| Qualification Status |
|
Not Qualified
|
|
|
|
Compare 71V2546XS150BGG8 with alternatives
Compare K7I163684B-FC330 with alternatives