7140SA55CGB8
vs
5962-8687515XX
feature comparison
| Pbfree Code |
Yes
|
|
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
INTEGRATED DEVICE TECHNOLOGY INC
|
TEMIC SEMICONDUCTORS
|
| Package Description |
DIP, DIP48,.6
|
CERAMIC, DIP-48
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
3A001.A.2.C
|
|
| HTS Code |
8542.32.00.41
|
|
| Access Time-Max |
55 ns
|
55 ns
|
| I/O Type |
COMMON
|
COMMON
|
| JESD-30 Code |
R-XDIP-T48
|
R-GDIP-T48
|
| JESD-609 Code |
e3
|
|
| Memory Density |
8192 bit
|
8192 bit
|
| Memory IC Type |
MULTI-PORT SRAM
|
MULTI-PORT SRAM
|
| Memory Width |
8
|
8
|
| Number of Ports |
2
|
2
|
| Number of Terminals |
48
|
48
|
| Number of Words |
1024 words
|
1024 words
|
| Number of Words Code |
1000
|
1000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
125 °C
|
125 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Organization |
1KX8
|
1KX8
|
| Output Characteristics |
3-STATE
|
3-STATE
|
| Package Body Material |
CERAMIC
|
CERAMIC, GLASS-SEALED
|
| Package Code |
DIP
|
DIP
|
| Package Equivalence Code |
DIP48,.6
|
DIP48,.6
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Screening Level |
38535Q/M;38534H;883B
|
MIL-STD-883
|
| Standby Current-Max |
0.03 A
|
0.004 A
|
| Standby Voltage-Min |
4.5 V
|
2 V
|
| Supply Current-Max |
0.19 mA
|
0.185 mA
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
MILITARY
|
MILITARY
|
| Terminal Finish |
MATTE TIN
|
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Pitch |
2.54 mm
|
2.54 mm
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
2
|
1
|
| Number of Functions |
|
1
|
| Supply Voltage-Max (Vsup) |
|
5.5 V
|
| Supply Voltage-Min (Vsup) |
|
4.5 V
|
|
|
|
Compare 7140SA55CGB8 with alternatives
Compare 5962-8687515XX with alternatives