6A100GB0
vs
FR607G-H
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
FORMOSA MICROSEMI CO LTD
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Additional Feature
HIGH RELIABILITY, LOW POWER LOSS
Application
GENERAL PURPOSE
EFFICIENCY
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1 V
1.3 V
JESD-30 Code
O-PALF-W2
O-PALF-W2
JESD-609 Code
e3
Non-rep Pk Forward Current-Max
250 A
250 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Output Current-Max
6 A
6 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Peak Reflow Temperature (Cel)
260
NOT SPECIFIED
Rep Pk Reverse Voltage-Max
1000 V
1000 V
Reverse Current-Max
10 µA
5 µA
Surface Mount
NO
NO
Terminal Finish
MATTE TIN
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Time@Peak Reflow Temperature-Max (s)
10
NOT SPECIFIED
Base Number Matches
1
1
Package Description
O-PALF-W2
Reverse Recovery Time-Max
0.5 µs
Compare 6A100GB0 with alternatives
Compare FR607G-H with alternatives