6A10-T3
vs
P600M-E3/54
feature comparison
Rohs Code |
No
|
|
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
SANGDEST MICROELECTRONICS (NANJING) CO LTD
|
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
|
Package Description |
O-PALF-W2
|
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.80
|
8541.10.00.80
|
Application |
GENERAL PURPOSE
|
GENERAL PURPOSE
|
Case Connection |
ISOLATED
|
ISOLATED
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
JESD-30 Code |
O-PALF-W2
|
O-PALF-W2
|
Moisture Sensitivity Level |
1
|
|
Non-rep Pk Forward Current-Max |
400 A
|
400 A
|
Number of Elements |
1
|
1
|
Number of Phases |
1
|
1
|
Number of Terminals |
2
|
2
|
Output Current-Max |
6 A
|
6 A
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
LONG FORM
|
LONG FORM
|
Qualification Status |
Not Qualified
|
|
Rep Pk Reverse Voltage-Max |
1000 V
|
1000 V
|
Surface Mount |
NO
|
NO
|
Terminal Form |
WIRE
|
WIRE
|
Terminal Position |
AXIAL
|
AXIAL
|
Base Number Matches |
1
|
1
|
Date Of Intro |
|
2019-10-31
|
Additional Feature |
|
LOW LEAKAGE CURRENT
|
Forward Voltage-Max (VF) |
|
1.4 V
|
Operating Temperature-Max |
|
150 °C
|
Operating Temperature-Min |
|
-50 °C
|
Reverse Current-Max |
|
5 µA
|
Reverse Recovery Time-Max |
|
2.5 µs
|
|
|
|
Compare 6A10-T3 with alternatives
Compare P600M-E3/54 with alternatives