6341-1L vs CY7C225-30DMB feature comparison

6341-1L Monolithic Memories (RETIRED)

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CY7C225-30DMB Cypress Semiconductor

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MONOLITHIC MEMORIES CYPRESS SEMICONDUCTOR CORP
Reach Compliance Code unknown not_compliant
Access Time-Max 55 ns 20 ns
JESD-30 Code S-MQCC-N28 R-GDIP-T24
Memory Density 32768 bit 4096 bit
Memory IC Type OTP ROM OTP ROM
Memory Width 8 8
Number of Functions 1 1
Number of Terminals 28 24
Number of Words 512 words 512 words
Number of Words Code 4000 512
Operating Mode ASYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 75 °C 125 °C
Operating Temperature-Min -55 °C
Organization 4KX8 512X8
Package Body Material METAL CERAMIC, GLASS-SEALED
Package Shape SQUARE RECTANGULAR
Package Style CHIP CARRIER IN-LINE
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Supply Current-Max 0.175 mA 0.12 mA
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount YES NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL EXTENDED MILITARY
Terminal Form NO LEAD THROUGH-HOLE
Terminal Position QUAD DUAL
Base Number Matches 1 1
Pbfree Code No
Rohs Code No
Part Package Code DIP
Package Description DIP, DIP24,.3
Pin Count 24
ECCN Code EAR99
HTS Code 8542.32.00.71
Additional Feature BUFFERED COMMON NOT_PRESET AND NOT_CLEAR INPUTS
I/O Type COMMON
JESD-609 Code e0
Output Characteristics 3-STATE
Package Code DIP
Package Equivalence Code DIP24,.3
Programming Voltage 13.5 V
Screening Level 38535Q/M;38534H;883B
Standby Current-Max 0.12 A
Supply Voltage-Max (Vsup) 5.5 V
Supply Voltage-Min (Vsup) 4.5 V
Terminal Finish TIN LEAD
Terminal Pitch 2.54 mm

Compare 6341-1L with alternatives

Compare CY7C225-30DMB with alternatives