5KP8.0E3 vs 5KP8.0/4E feature comparison

5KP8.0E3 Microsemi Corporation

Buy Now Datasheet

5KP8.0/4E Vishay Semiconductors

Buy Now Datasheet
Rohs Code Yes No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MICROSEMI CORP VISHAY SEMICONDUCTORS
Package Description O-PALF-W2 O-PALF-W2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 10.9 V 10.9 V
Breakdown Voltage-Min 8.89 V 8.89 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 5000 W 5000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 8 W 8 W
Reference Standard IEC-61000-4-2, 4-4, 4-5
Rep Pk Reverse Voltage-Max 8 V 8 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 1
Pin Count 2
Manufacturer Package Code CASE P600
Breakdown Voltage-Nom 9.9 V
Clamping Voltage-Max 15 V
JESD-609 Code e0
Qualification Status Not Qualified
Terminal Finish TIN LEAD

Compare 5KP8.0E3 with alternatives

Compare 5KP8.0/4E with alternatives