5KP8.0A vs 5KP8.0A_R2_00001 feature comparison

5KP8.0A New England Semiconductor

Buy Now Datasheet

5KP8.0A_R2_00001 PanJit Semiconductor

Buy Now Datasheet
Rohs Code No Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer NEW ENGLAND SEMICONDUCTOR PANJIT INTERNATIONAL INC
Reach Compliance Code unknown not_compliant
Breakdown Voltage-Nom 9.4 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 13.6 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e0 e3
Non-rep Peak Rev Power Dis-Max 5000 W 5000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 8 V 8 V
Reverse Current-Max 150 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish Tin/Lead (Sn/Pb) TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 54 1
Pbfree Code Yes
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE
Breakdown Voltage-Max 10.23 V
Breakdown Voltage-Min 8.89 V
Reference Standard UL RECOGNIZED

Compare 5KP8.0A_R2_00001 with alternatives