5KP60CATR
vs
5KP60CAE3/TR
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
SANGDEST MICROELECTRONICS (NANJING) CO LTD
MICROSEMI CORP
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Date Of Intro
2019-02-20
Additional Feature
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
73.7 V
73.7 V
Breakdown Voltage-Min
66.7 V
66.7 V
Breakdown Voltage-Nom
70.2 V
70.2 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
96.8 V
96.8 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-PALF-W2
O-PALF-W2
Non-rep Peak Rev Power Dis-Max
5000 W
5000 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
150 °C
Operating Temperature-Min
-55 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
8 W
1.56 W
Reference Standard
MIL-STD-750
Rep Pk Reverse Voltage-Max
60 V
60 V
Reverse Current-Max
10 µA
Reverse Test Voltage
60 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
4
1
Package Description
O-PALF-W2
JEDEC-95 Code
DO-204AR
JESD-609 Code
e3
Moisture Sensitivity Level
1
Qualification Status
Not Qualified
Terminal Finish
MATTE TIN
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