5KP58A-G
vs
5KP58A-5AE3
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
SANGDEST MICROELECTRONICS (NANJING) CO LTD
|
MICROSEMI CORP
|
| Package Description |
O-PALF-W2
|
O-PALF-W2
|
| Reach Compliance Code |
unknown
|
compliant
|
| Breakdown Voltage-Max |
71.2 V
|
71.2 V
|
| Breakdown Voltage-Min |
64.4 V
|
64.4 V
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JESD-30 Code |
O-PALF-W2
|
O-PALF-W2
|
| Moisture Sensitivity Level |
1
|
|
| Non-rep Peak Rev Power Dis-Max |
5000 W
|
5000 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
8 W
|
5 W
|
| Qualification Status |
Not Qualified
|
|
| Reference Standard |
UL RECOGNIZED
|
|
| Rep Pk Reverse Voltage-Max |
58 V
|
58 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
3
|
1
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.50
|
| Operating Temperature-Max |
|
150 °C
|
| Operating Temperature-Min |
|
-55 °C
|
|
|
|
Compare 5KP58A-5AE3 with alternatives