5KP51A-E3/54
vs
5KP51A-4-E3
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
VISHAY SEMICONDUCTORS
VISHAY SEMICONDUCTORS
Package Description
O-PALF-W2
O-PALF-W2
Pin Count
2
2
Manufacturer Package Code
CASE P600
CASE P600
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY ,HIGH RELIABILITY
Breakdown Voltage-Max
62.7 V
62.7 V
Breakdown Voltage-Min
56.7 V
56.7 V
Breakdown Voltage-Nom
59.7 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
82.4 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-PALF-W2
O-PALF-W2
JESD-609 Code
e3
e3
Non-rep Peak Rev Power Dis-Max
5000 W
5000 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Peak Reflow Temperature (Cel)
NOT APPLICABLE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
8 W
8 W
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
51 V
51 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
Matte Tin (Sn)
MATTE TIN
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Time@Peak Reflow Temperature-Max (s)
NOT APPLICABLE
Base Number Matches
1
1
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