5KP33A_B0_00001
vs
5KP33
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
PAN JIT INTERNATIONAL INC
MDE SEMICONDUCTOR INC
Package Description
O-PALF-W2
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE
EXCELLENT CLAMPING CAPABILITY; PRSM-MIN
Breakdown Voltage-Max
42.2 V
42.515 V
Breakdown Voltage-Min
36.7 V
34.785 V
Breakdown Voltage-Nom
39.45 V
38.65 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
53.3 V
53.3 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-PALF-W2
O-PALF-W2
JESD-609 Code
e3
e3
Non-rep Peak Rev Power Dis-Max
5000 W
5000 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Reference Standard
UL RECOGNIZED
MIL-STD-750
Rep Pk Reverse Voltage-Max
33 V
33 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN
Tin (Sn)
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
1
46
Power Dissipation-Max
8 W
Reverse Current-Max
10 µA
Reverse Test Voltage
33 V
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