5KP33 vs 5KP33TR feature comparison

5KP33 Galaxy Semi-Conductor Co Ltd

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5KP33TR MDE Semiconductor Inc

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Rohs Code Yes
Part Life Cycle Code Active Active
Ihs Manufacturer GALAXY SEMI-CONDUCTOR CO LTD MDE SEMICONDUCTOR INC
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Nom 40.8 V 38.65 V
Clamping Voltage-Max 59 V 53.3 V
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max 33 V 33 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Base Number Matches 46 4
Additional Feature EXCELLENT CLAMPING CAPABILITY; PRSM-MIN
Breakdown Voltage-Max 42.515 V
Breakdown Voltage-Min 34.785 V
Case Connection ISOLATED
Configuration SINGLE
JESD-30 Code O-PALF-W2
Non-rep Peak Rev Power Dis-Max 5000 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Power Dissipation-Max 8 W
Reference Standard MIL-STD-750
Reverse Current-Max 10 µA
Reverse Test Voltage 33 V
Terminal Form WIRE
Terminal Position AXIAL