5KP33 vs 5KP33E3/TR13 feature comparison

5KP33 MDE Semiconductor Inc

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5KP33E3/TR13 Microsemi Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Active Transferred
Ihs Manufacturer MDE SEMICONDUCTOR INC MICROSEMI CORP
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY; PRSM-MIN
Breakdown Voltage-Max 42.515 V
Breakdown Voltage-Min 34.785 V
Breakdown Voltage-Nom 38.65 V 40.8 V
Case Connection ISOLATED
Clamping Voltage-Max 53.3 V 59 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3
Non-rep Peak Rev Power Dis-Max 5000 W
Number of Elements 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 8 W
Reference Standard MIL-STD-750
Rep Pk Reverse Voltage-Max 33 V 33 V
Reverse Current-Max 10 µA
Reverse Test Voltage 33 V
Surface Mount NO NO
Technology AVALANCHE
Terminal Finish Tin (Sn)
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 46 2
JEDEC-95 Code DO-204AR