5KP18A vs 5.0SMDJ18A feature comparison

5KP18A International Semiconductor Inc

Buy Now Datasheet

5.0SMDJ18A YAGEO Corporation

Buy Now Datasheet
Part Life Cycle Code Obsolete Active
Ihs Manufacturer INTERNATIONAL SEMICONDUCTOR INC YAGEO CORP
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature LOW IMPEDANCE EXCELLENT CLAMPING CAPABILITY, TR, 7 INCH: 500
Breakdown Voltage-Max 22.1 V 22.1 V
Breakdown Voltage-Min 20 V 20 V
Breakdown Voltage-Nom 21.1 V 21.05 V
Case Connection ISOLATED
Clamping Voltage-Max 29.2 V 29.2 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 5000 W 5000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style LONG FORM SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 6.5 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 18 V 18 V
Reverse Current-Max 10 µA 10 µA
Surface Mount NO YES
Technology AVALANCHE AVALANCHE
Terminal Form WIRE C BEND
Terminal Position AXIAL DUAL
Base Number Matches 5 8
Rohs Code Yes
Date Of Intro 2018-11-05
JEDEC-95 Code DO-214AB
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Reference Standard UL CERTIFIED
Reverse Test Voltage 18 V
Time@Peak Reflow Temperature-Max (s) 40

Compare 5KP18A with alternatives

Compare 5.0SMDJ18A with alternatives