5962-9561305HYC
vs
5962-9207805HXX
feature comparison
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
AEROFLEX MICROELECTRONIC SOLUTIONS
|
MICROSEMI CORP
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
3A001.A.2.C
|
3A001.A.2.C
|
| HTS Code |
8542.32.00.41
|
8542.32.00.41
|
| Access Time-Max |
55 ns
|
55 ns
|
| I/O Type |
COMMON
|
|
| JESD-30 Code |
R-XDIP-T32
|
R-CDIP-T32
|
| Memory Density |
4194304 bit
|
4194304 bit
|
| Memory IC Type |
STANDARD SRAM
|
SRAM MODULE
|
| Memory Width |
8
|
8
|
| Number of Terminals |
32
|
32
|
| Number of Words |
524288 words
|
524288 words
|
| Number of Words Code |
512000
|
512000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
125 °C
|
125 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Organization |
512KX8
|
512KX8
|
| Output Characteristics |
3-STATE
|
|
| Package Body Material |
CERAMIC
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Code |
DIP
|
DIP
|
| Package Equivalence Code |
DIP32,.6
|
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Screening Level |
38535Q/M;38534H;883B
|
|
| Standby Current-Max |
0.007 A
|
|
| Standby Voltage-Min |
2 V
|
|
| Supply Current-Max |
0.16 mA
|
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
MILITARY
|
MILITARY
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Pitch |
2.54 mm
|
2.54 mm
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
8
|
4
|
| Package Description |
|
DIP,
|
| Additional Feature |
|
BATTERY BACK-UP OPERATION
|
| Length |
|
42.4 mm
|
| Number of Functions |
|
1
|
| Seated Height-Max |
|
5.1 mm
|
| Supply Voltage-Max (Vsup) |
|
5.5 V
|
| Supply Voltage-Min (Vsup) |
|
4.5 V
|
| Width |
|
15.24 mm
|
|
|
|
Compare 5962-9561305HYC with alternatives
Compare 5962-9207805HXX with alternatives