5962-9315707HXC
vs
5962-9315707HXX
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
MICROSEMI CORP
MICROSEMI CORP
Package Description
,
DIP,
Reach Compliance Code
compliant
compliant
ECCN Code
3A001.A.2.C
3A001.A.2.C
HTS Code
8542.32.00.41
8542.32.00.41
Access Time-Max
35 ns
35 ns
Additional Feature
BATTERY BACK-UP OPERATION
BATTERY BACK-UP OPERATION
JESD-30 Code
R-CDIP-T32
R-CDIP-T32
JESD-609 Code
e4
Memory Density
2097152 bit
2097152 bit
Memory IC Type
SRAM MODULE
SRAM MODULE
Memory Width
8
8
Number of Functions
1
1
Number of Terminals
32
32
Number of Words
262144 words
262144 words
Number of Words Code
256000
256000
Operating Mode
ASYNCHRONOUS
ASYNCHRONOUS
Operating Temperature-Max
125 °C
125 °C
Operating Temperature-Min
-55 °C
-55 °C
Organization
256KX8
256KX8
Package Body Material
CERAMIC, METAL-SEALED COFIRED
CERAMIC, METAL-SEALED COFIRED
Package Code
DIP
DIP
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
IN-LINE
Parallel/Serial
PARALLEL
PARALLEL
Qualification Status
Not Qualified
Not Qualified
Supply Voltage-Max (Vsup)
5.5 V
5.5 V
Supply Voltage-Min (Vsup)
4.5 V
4.5 V
Supply Voltage-Nom (Vsup)
5 V
5 V
Surface Mount
NO
NO
Technology
CMOS
CMOS
Temperature Grade
MILITARY
MILITARY
Terminal Finish
GOLD
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
DUAL
DUAL
Base Number Matches
4
4
Length
42.4 mm
Seated Height-Max
5.1 mm
Terminal Pitch
2.54 mm
Width
15.24 mm
Compare 5962-9315707HXC with alternatives
Compare 5962-9315707HXX with alternatives