5962-9207805HXX
vs
WMS512K8-L15CQ
feature comparison
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
MICROSEMI CORP
|
MICROSEMI CORP
|
| Package Description |
DIP,
|
DIP,
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
3A001.A.2.C
|
|
| HTS Code |
8542.32.00.41
|
|
| Access Time-Max |
55 ns
|
15 ns
|
| Additional Feature |
BATTERY BACK-UP OPERATION
|
|
| JESD-30 Code |
R-CDIP-T32
|
R-CDIP-T32
|
| Length |
42.4 mm
|
42.2 mm
|
| Memory Density |
4194304 bit
|
4194304 bit
|
| Memory IC Type |
SRAM MODULE
|
STANDARD SRAM
|
| Memory Width |
8
|
8
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
32
|
32
|
| Number of Words |
524288 words
|
524288 words
|
| Number of Words Code |
512000
|
512000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
125 °C
|
70 °C
|
| Operating Temperature-Min |
-55 °C
|
|
| Organization |
512KX8
|
512KX8
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Code |
DIP
|
DIP
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Seated Height-Max |
5.1 mm
|
5.13 mm
|
| Supply Voltage-Max (Vsup) |
5.5 V
|
5.5 V
|
| Supply Voltage-Min (Vsup) |
4.5 V
|
4.5 V
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
MILITARY
|
COMMERCIAL
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Pitch |
2.54 mm
|
|
| Terminal Position |
DUAL
|
DUAL
|
| Width |
15.24 mm
|
|
| Base Number Matches |
1
|
4
|
| Pbfree Code |
|
No
|
| Rohs Code |
|
No
|
| Part Package Code |
|
DIP
|
| Pin Count |
|
32
|
| JESD-609 Code |
|
e4
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Terminal Finish |
|
GOLD
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare 5962-9207805HXX with alternatives
Compare WMS512K8-L15CQ with alternatives