5082-3080
vs
1N5767
feature comparison
| Part Life Cycle Code |
Active
|
|
| Ihs Manufacturer |
ASI SEMICONDUCTOR INC
|
|
| Package Description |
O-LALF-W2
|
|
| Pin Count |
2
|
|
| Reach Compliance Code |
unknown
|
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.80
|
|
| Application |
ATTENUATOR; SWITCHING
|
|
| Breakdown Voltage-Min |
100 V
|
|
| Case Connection |
ISOLATED
|
|
| Configuration |
SINGLE
|
|
| Diode Capacitance-Max |
0.4 pF
|
|
| Diode Capacitance-Nom |
0.4 pF
|
|
| Diode Element Material |
SILICON
|
|
| Diode Forward Resistance-Max |
2.5 Ω
|
|
| Diode Res Test Current |
100 mA
|
|
| Diode Res Test Frequency |
100 MHz
|
|
| Diode Type |
PIN DIODE
|
|
| JESD-30 Code |
O-LALF-W2
|
|
| Minority Carrier Lifetime-Nom |
1300 µs
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
2
|
|
| Operating Temperature-Max |
150 °C
|
|
| Operating Temperature-Min |
-65 °C
|
|
| Package Body Material |
GLASS
|
|
| Package Shape |
ROUND
|
|
| Package Style |
LONG FORM
|
|
| Qualification Status |
Not Qualified
|
|
| Reverse Test Voltage |
50 V
|
|
| Surface Mount |
NO
|
|
| Technology |
POSITIVE-INTRINSIC-NEGATIVE
|
|
| Terminal Form |
WIRE
|
|
| Terminal Position |
AXIAL
|
|
| Base Number Matches |
1
|
|
|
|
|
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