5082-2751
vs
5082-2751
feature comparison
Part Life Cycle Code |
Transferred
|
Active
|
Ihs Manufacturer |
AGILENT TECHNOLOGIES INC
|
ASI SEMICONDUCTOR INC
|
Package Description |
O-CEMW-N2
|
O-XEMW-N2
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.60
|
8541.10.00.60
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
MIXER DIODE
|
MIXER DIODE
|
Impedance-Max |
1600 Ω
|
1600 Ω
|
Impedance-Min |
1200 Ω
|
1200 Ω
|
JESD-30 Code |
O-CEMW-N2
|
O-XEMW-N2
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Frequency-Max |
15 GHz
|
15 GHz
|
Operating Frequency-Min |
1 GHz
|
1 GHz
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
UNSPECIFIED
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
MICROWAVE
|
MICROWAVE
|
Power Dissipation-Max |
0.1 W
|
0.1 W
|
Pulsed Input Power-Min |
2 W
|
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Tangential Signal Sensitivity-Min |
55 dBm
|
55 dBm
|
Technology |
SCHOTTKY
|
SCHOTTKY
|
Terminal Form |
NO LEAD
|
NO LEAD
|
Terminal Position |
END
|
END
|
Base Number Matches |
1
|
1
|
Diode Capacitance-Max |
|
1 pF
|
Frequency Band |
|
VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
|
Operating Temperature-Min |
|
-60 °C
|
|
|
|