5.0SMDJ75A-Q
vs
5.0SMDJ78AHR6G
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
BOURNS INC
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
not_compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Factory Lead Time
16 Weeks
Date Of Intro
2019-09-06
2017-06-14
Samacsys Manufacturer
Bourns
Additional Feature
PRSM-MIN
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
92.1 V
95.8 V
Breakdown Voltage-Min
83.3 V
86.7 V
Breakdown Voltage-Nom
87.7 V
91.25 V
Clamping Voltage-Max
157.3 V
126 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF)
5 V
JEDEC-95 Code
DO-214AB
DO-214AB
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Non-rep Peak Rev Power Dis-Max
5000 W
5000 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
175 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
6.5 W
6.25 W
Reference Standard
AEC-Q101; UL RECOGNIZED
AEC-Q101
Rep Pk Reverse Voltage-Max
75 V
78 V
Reverse Current-Max
2 µA
Reverse Test Voltage
75 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN
MATTE TIN
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
1
1
Package Description
SMC, 2 PIN
Compare 5.0SMDJ75A-Q with alternatives
Compare 5.0SMDJ78AHR6G with alternatives