5.0SMDJ70AR6G vs 5.0SMDJ70A-H feature comparison

5.0SMDJ70AR6G Taiwan Semiconductor

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5.0SMDJ70A-H Bourns Inc

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD BOURNS INC
Package Description R-PDSO-C2
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY PRSM-MIN
Breakdown Voltage-Max 86 V 86 V
Breakdown Voltage-Min 77.8 V 77.8 V
Breakdown Voltage-Nom 81.9 V 81.9 V
Clamping Voltage-Max 113 V 113 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 5000 W 5000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 6.25 W 6.5 W
Rep Pk Reverse Voltage-Max 70 V 70 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Samacsys Manufacturer Bourns
Forward Voltage-Max (VF) 5 V
Peak Reflow Temperature (Cel) 260
Reference Standard UL RECOGNIZED
Reverse Current-Max 2 µA
Reverse Test Voltage 70 V
Time@Peak Reflow Temperature-Max (s) 30

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