5.0SMDJ51A vs 5.0SMDJ51A feature comparison

5.0SMDJ51A Taiwan Semiconductor

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5.0SMDJ51A YAGEO Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD YAGEO CORP
Reach Compliance Code not_compliant compliant
Factory Lead Time 8 Weeks
Samacsys Manufacturer Taiwan Semiconductor
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-609 Code e3
Moisture Sensitivity Level 1 1
Terminal Finish Matte Tin (Sn)
Base Number Matches 8 8
ECCN Code EAR99
HTS Code 8541.10.00.50
Date Of Intro 2018-11-05
Additional Feature EXCELLENT CLAMPING CAPABILITY, TR, 7 INCH: 500
Breakdown Voltage-Max 62.7 V
Breakdown Voltage-Min 56.7 V
Breakdown Voltage-Nom 59.7 V
Clamping Voltage-Max 82.4 V
Configuration SINGLE
Diode Element Material SILICON
JEDEC-95 Code DO-214AB
JESD-30 Code R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 5000 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL
Power Dissipation-Max 6.5 W
Reference Standard UL CERTIFIED
Rep Pk Reverse Voltage-Max 51 V
Reverse Current-Max 2 µA
Reverse Test Voltage 51 V
Surface Mount YES
Technology AVALANCHE
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40

Compare 5.0SMDJ51A with alternatives

Compare 5.0SMDJ51A with alternatives