5.0SMDJ48A-H vs 5.0SMDJ48AR6G feature comparison

5.0SMDJ48A-H Bourns Inc

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5.0SMDJ48AR6G Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer BOURNS INC TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Samacsys Manufacturer Bourns
Additional Feature PRSM-MIN EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 58.9 V 58.9 V
Breakdown Voltage-Min 53.3 V 53.3 V
Breakdown Voltage-Nom 56.1 V 56.1 V
Clamping Voltage-Max 77.4 V 77.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 5 V
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 5000 W 5000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 6.5 W 6.25 W
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 48 V 48 V
Reverse Current-Max 2 µA
Reverse Test Voltage 48 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 1 1
Package Description R-PDSO-C2

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