5.0SMDJ30A-AT/TR7
vs
5.0SMDJ30AHM6G
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
YAGEO CORP
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Factory Lead Time
18 Weeks
Date Of Intro
2019-04-29
2017-06-14
Additional Feature
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
36.8 V
36.8 V
Breakdown Voltage-Min
33.3 V
33.3 V
Breakdown Voltage-Nom
35.05 V
35.05 V
Clamping Voltage-Max
48.4 V
48.4 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AB
DO-214AB
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Moisture Sensitivity Level
1
1
Non-rep Peak Rev Power Dis-Max
5000 W
5000 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
175 °C
Operating Temperature-Min
-65 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
6.5 W
6.25 W
Reference Standard
AEC-Q101; MIL-STD-750; UL CERTIFIED
AEC-Q101
Rep Pk Reverse Voltage-Max
30 V
30 V
Reverse Current-Max
2 µA
Reverse Test Voltage
30 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
40
Base Number Matches
1
1
Package Description
SMC, 2 PIN
Samacsys Manufacturer
Taiwan Semiconductor
JESD-609 Code
e3
Terminal Finish
MATTE TIN
Compare 5.0SMDJ30A-AT/TR7 with alternatives
Compare 5.0SMDJ30AHM6G with alternatives