5.0SMDJ28AH
vs
5.0SMDJ28AM6G
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
unknown
compliant
Factory Lead Time
8 Weeks
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Terminal Finish
Matte Tin (Sn)
MATTE TIN
Base Number Matches
1
1
Package Description
SMC, 2 PIN
ECCN Code
EAR99
HTS Code
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
34.4 V
Breakdown Voltage-Min
31.1 V
Breakdown Voltage-Nom
32.75 V
Clamping Voltage-Max
45.4 V
Configuration
SINGLE
Diode Element Material
SILICON
JEDEC-95 Code
DO-214AB
JESD-30 Code
R-PDSO-C2
Non-rep Peak Rev Power Dis-Max
5000 W
Number of Elements
1
Number of Terminals
2
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
Power Dissipation-Max
6.25 W
Rep Pk Reverse Voltage-Max
28 V
Surface Mount
YES
Technology
AVALANCHE
Terminal Form
C BEND
Terminal Position
DUAL
Compare 5.0SMDJ28AH with alternatives
Compare 5.0SMDJ28AM6G with alternatives