5.0SMDJ18A
vs
5KP18A
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
INTERNATIONAL SEMICONDUCTOR INC
Reach Compliance Code
not_compliant
unknown
Factory Lead Time
8 Weeks
Samacsys Manufacturer
Taiwan Semiconductor
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-609 Code
e3
Moisture Sensitivity Level
1
Terminal Finish
Matte Tin (Sn)
Base Number Matches
8
5
ECCN Code
EAR99
HTS Code
8541.10.00.50
Additional Feature
LOW IMPEDANCE
Breakdown Voltage-Max
22.1 V
Breakdown Voltage-Min
20 V
Breakdown Voltage-Nom
21.1 V
Case Connection
ISOLATED
Clamping Voltage-Max
29.2 V
Configuration
SINGLE
Diode Element Material
SILICON
JESD-30 Code
O-PALF-W2
Non-rep Peak Rev Power Dis-Max
5000 W
Number of Elements
1
Number of Terminals
2
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
ROUND
Package Style
LONG FORM
Polarity
UNIDIRECTIONAL
Power Dissipation-Max
5 W
Qualification Status
Not Qualified
Rep Pk Reverse Voltage-Max
18 V
Reverse Current-Max
10 µA
Surface Mount
NO
Technology
AVALANCHE
Terminal Form
WIRE
Terminal Position
AXIAL
Compare 5.0SMDJ18A with alternatives
Compare 5KP18A with alternatives