5.0SMDJ16A-AT/13 vs 5.0SMDJ16AM6G feature comparison

5.0SMDJ16A-AT/13 YAGEO Corporation

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5.0SMDJ16AM6G Taiwan Semiconductor

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Part Life Cycle Code Active Obsolete
Ihs Manufacturer YAGEO CORP TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Date Of Intro 2019-08-02
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 19.7 V 19.7 V
Breakdown Voltage-Min 17.8 V 17.8 V
Breakdown Voltage-Nom 18.75 V 18.75 V
Clamping Voltage-Max 26 V 26 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 5000 W 5000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 6.5 W 6.25 W
Reference Standard AEC-Q101; UL CERTIFIED
Rep Pk Reverse Voltage-Max 16 V 16 V
Reverse Current-Max 50 µA
Reverse Test Voltage 16 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 40
Base Number Matches 1 1
Rohs Code Yes
Package Description SMC, 2 PIN
JESD-609 Code e3
Terminal Finish MATTE TIN

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