5.0SMDJ100A-AT/7
vs
5.0SMDJ100AM6G
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
YAGEO CORP
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Date Of Intro
2019-08-02
Additional Feature
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
123 V
123 V
Breakdown Voltage-Min
111 V
111 V
Breakdown Voltage-Nom
117 V
117 V
Clamping Voltage-Max
162 V
162 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-214AB
DO-214AB
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Moisture Sensitivity Level
1
1
Non-rep Peak Rev Power Dis-Max
5000 W
5000 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
175 °C
Operating Temperature-Min
-65 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
6.5 W
6.25 W
Reference Standard
AEC-Q101; UL CERTIFIED
Rep Pk Reverse Voltage-Max
100 V
100 V
Reverse Current-Max
2 µA
Reverse Test Voltage
100 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
40
Base Number Matches
1
1
Rohs Code
Package Description
SMC, 2 PIN
JESD-609 Code
e3
Terminal Finish
MATTE TIN
Compare 5.0SMDJ100A-AT/7 with alternatives
Compare 5.0SMDJ100AM6G with alternatives