4N35(TP1)
vs
MCT5210
feature comparison
| Pbfree Code |
No
|
|
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
TOSHIBA CORP
|
SIEMENS A G
|
| Package Description |
DIP-6
|
DIP-6
|
| Reach Compliance Code |
unknown
|
unknown
|
| HTS Code |
8541.40.80.00
|
8541.40.80.00
|
| Additional Feature |
UL RECOGNIZED
|
UL RECOGNIZED, CMOS TO TTL COMPATIBILITY
|
| Coll-Emtr Bkdn Voltage-Min |
30 V
|
70 V
|
| Configuration |
SINGLE
|
SINGLE
|
| Current Transfer Ratio-Nom |
100%
|
7%
|
| Dark Current-Max |
50 nA
|
100 nA
|
| Forward Current-Max |
0.06 A
|
0.04 A
|
| Isolation Voltage-Max |
2500 V
|
5300 V
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
1
|
| Operating Temperature-Max |
100 °C
|
100 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Optoelectronic Device Type |
TRANSISTOR OUTPUT OPTOCOUPLER
|
TRANSISTOR OUTPUT OPTOCOUPLER
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
| Base Number Matches |
1
|
10
|
|
|
|
Compare 4N35(TP1) with alternatives
Compare MCT5210 with alternatives