3SK293
vs
BF996STRL13
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
End Of Life
Obsolete
Ihs Manufacturer
TOSHIBA CORP
NXP SEMICONDUCTORS
Package Description
SMALL OUTLINE, R-PDSO-G4
SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Additional Feature
LOW NOISE
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
12.5 V
20 V
Drain Current-Max (ID)
0.03 A
0.03 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
0.04 pF
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
ULTRA HIGH FREQUENCY BAND
JESD-30 Code
R-PDSO-G4
R-PDSO-G4
Number of Elements
1
1
Number of Terminals
4
4
Operating Mode
DUAL GATE, DEPLETION MODE
DUAL GATE, DEPLETION MODE
Operating Temperature-Max
125 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Gain-Min (Gp)
20 dB
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
AMPLIFIER
AMPLIFIER
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
2
Case Connection
SOURCE
JESD-609 Code
e3
Terminal Finish
TIN
Compare 3SK293 with alternatives
Compare BF996STRL13 with alternatives