3N259-M
vs
KBP10M
feature comparison
Pbfree Code |
No
|
|
Rohs Code |
No
|
|
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
CENTRAL SEMICONDUCTOR CORP
|
GENERAL INSTRUMENT CORP
|
Reach Compliance Code |
not_compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.80
|
8541.10.00.80
|
Breakdown Voltage-Min |
1000 V
|
1000 V
|
Configuration |
BRIDGE, 4 ELEMENTS
|
BRIDGE, 4 ELEMENTS
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
BRIDGE RECTIFIER DIODE
|
BRIDGE RECTIFIER DIODE
|
Forward Voltage-Max (VF) |
1.1 V
|
1.3 V
|
JESD-30 Code |
R-PSIP-T4
|
R-PSIP-T4
|
JESD-609 Code |
e0
|
|
Non-rep Pk Forward Current-Max |
55 A
|
30 A
|
Number of Elements |
4
|
4
|
Number of Phases |
1
|
1
|
Number of Terminals |
4
|
4
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Operating Temperature-Min |
-65 °C
|
-55 °C
|
Output Current-Max |
2 A
|
1.5 A
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
IN-LINE
|
IN-LINE
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Rep Pk Reverse Voltage-Max |
1000 V
|
1000 V
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Base Number Matches |
1
|
11
|
Reference Standard |
|
UL RECOGNIZED
|
Reverse Current-Max |
|
5 µA
|
|
|
|
Compare 3N259-M with alternatives
Compare KBP10M with alternatives