3N259 vs CBR1-L100M feature comparison

3N259 Motorola Semiconductor Products

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CBR1-L100M Central Semiconductor Corp

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MOTOROLA INC CENTRAL SEMICONDUCTOR CORP
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Breakdown Voltage-Min 1000 V 1000 V
Case Connection ISOLATED
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1 V
JESD-30 Code R-PSIP-T4 R-PSIP-T4
JESD-609 Code e0 e0
Non-rep Pk Forward Current-Max 60 A 50 A
Number of Elements 4 4
Number of Phases 1 1
Number of Terminals 4 4
Operating Temperature-Max 165 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Output Current-Max 2 A 1.5 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 1000 V 1000 V
Reverse Current-Max 10 µA 10 µA
Surface Mount NO NO
Terminal Finish TIN LEAD Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Base Number Matches 14 1
Pbfree Code No
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reverse Test Voltage 1000 V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare 3N259 with alternatives

Compare CBR1-L100M with alternatives