3N258 vs 2KBP08M feature comparison

3N258 General Instrument Corp

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2KBP08M Sangdest Microelectronics (Nanjing) Co Ltd

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer GENERAL INSTRUMENT CORP SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Breakdown Voltage-Min 800 V 800 V
Case Connection ISOLATED
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1.1 V
JESD-30 Code R-PSIP-T4 R-PSIP-W4
Non-rep Pk Forward Current-Max 60 A 60 A
Number of Elements 4 4
Number of Phases 1 1
Number of Terminals 4 4
Operating Temperature-Max 165 °C
Operating Temperature-Min -55 °C
Output Current-Max 2 A 2 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 800 V 800 V
Reverse Current-Max 5 µA
Surface Mount NO NO
Terminal Form THROUGH-HOLE WIRE
Terminal Position SINGLE SINGLE
Base Number Matches 15 14
Rohs Code No
Package Description PLASTIC, KBP, 4 PIN
Additional Feature HIGH RELIABILITY
Moisture Sensitivity Level 1

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