3KP100C vs 3KP100C_B0_10001 feature comparison

3KP100C Formosa Microsemi Co Ltd

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3KP100C_B0_10001 PanJit Semiconductor

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Part Life Cycle Code Active Obsolete
Ihs Manufacturer FORMOSA MICROSEMI CO LTD PAN JIT INTERNATIONAL INC
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE
Breakdown Voltage-Max 123 V 141 V
Breakdown Voltage-Min 111 V 111 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 3000 W 3000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 6.5 W
Rep Pk Reverse Voltage-Max 100 V 100 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 19 1
Pbfree Code Yes
Rohs Code Yes
Package Description O-PALF-W2
Breakdown Voltage-Nom 126 V
Clamping Voltage-Max 179 V
JESD-609 Code e3
Reference Standard UL RECOGNIZED
Terminal Finish TIN

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Compare 3KP100C_B0_10001 with alternatives