3KASMC36AHM3_A/H vs 3.0SMCJ36 feature comparison

3KASMC36AHM3_A/H Vishay Intertechnologies

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3.0SMCJ36 Galaxy Microelectronics

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Part Life Cycle Code Obsolete Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Package Description SMC, 2 PIN
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature HIGH RELIABILITY, EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 44.2 V 48.9 V
Breakdown Voltage-Min 40 V 40 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 3000 W 3000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 185 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 6 W
Reference Standard AEC-Q101 MIL-STD-202
Rep Pk Reverse Voltage-Max 36 V 36 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 19
Breakdown Voltage-Nom 44.45 V
Clamping Voltage-Max 64.3 V
Reverse Current-Max 5 µA
Reverse Test Voltage 36 V

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