31DF6 vs MS503 feature comparison

31DF6 Taiwan Semiconductor

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MS503 Microsemi Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD MICROSEMI CORP
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Additional Feature HIGH RELIABILITY, LOW POWER LOSS
Application EFFICIENCY GENERAL PURPOSE
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 Code DO-201AD DO-201AD
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 45 A 300 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -40 °C -55 °C
Output Current-Max 1.2 A 5 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 600 V 30 V
Reverse Recovery Time-Max 0.035 µs
Surface Mount NO NO
Terminal Finish Matte Tin (Sn)
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) 10 NOT SPECIFIED
Base Number Matches 2 1
Pbfree Code Yes
Package Description O-PALF-W2
Forward Voltage-Max (VF) 0.49 V
Reverse Current-Max 250 µA
Technology SCHOTTKY

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