30KPA78ATR vs MX30KPA78AE3 feature comparison

30KPA78ATR MDE Semiconductor Inc

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MX30KPA78AE3 Microsemi Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer MDE SEMICONDUCTOR INC MICROSEMI CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Nom 87.1 V
Clamping Voltage-Max 129 V 129 V
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max 78 V 78 V
Surface Mount NO NO
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 3 1
Package Description ROHS COMPLIANT, PLASTIC PACKAGE-2
Pin Count 2
Breakdown Voltage-Min 87.1 V
Case Connection ISOLATED
Configuration SINGLE
Diode Element Material SILICON
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 30000 W
Number of Elements 1
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Power Dissipation-Max 1.61 W
Qualification Status Not Qualified
Reference Standard MIL-19500
Technology AVALANCHE
Terminal Finish MATTE TIN

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