30KPA78A
vs
MX30KPA78AE3
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
MICROSEMI CORP
Reach Compliance Code
unknown
unknown
Breakdown Voltage-Min
87.1 V
87.1 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-PALF-W2
O-PALF-W2
Non-rep Peak Rev Power Dis-Max
30000 W
30000 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
150 °C
Operating Temperature-Min
-55 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max
78 V
78 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
14
1
Rohs Code
Package Description
ROHS COMPLIANT, PLASTIC PACKAGE-2
Pin Count
2
ECCN Code
EAR99
HTS Code
8541.10.00.50
Case Connection
ISOLATED
Clamping Voltage-Max
129 V
JESD-609 Code
e3
Moisture Sensitivity Level
1
Power Dissipation-Max
1.61 W
Qualification Status
Not Qualified
Reference Standard
MIL-19500
Terminal Finish
MATTE TIN
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